期刊
APPLIED PHYSICS LETTERS
卷 109, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4972304
关键词
-
资金
- National Key Research Program of China [2016YFA0300700]
- National Natural Science Foundation of China [11534015, 51371192, 11227405, 11274363, 51671213]
Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films were prepared on Metglas foil substrates by the sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the heterostructure can be switched reproducibly to different levels between positive and negative values by applying selective electric-field pulses. Compared with bulk multiferroic heterostructures, the polarization switching voltage was reduced to 7V. Our facile technological approach enables this organic magnetoelectric heterostructure as a promising candidate for the applications in multilevel TCRAM devices. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据