Bias voltage-controlled ferromagnetism switching in undoped zinc oxide thin film memory device

The bipolar resistive switching properties of Pt/ZnO/Pt multilayer film structure were investigated in this study. The M-H curves corresponding to the Pt/ZnO/Pt bipolar resistive switching device maintained at initial, high resistance, and low resistance states were individually obtained; all of which were ferromagnetic in nature. The strength of saturation magnetization of the device separately set at low resistance state, and the initial state was found to be strongest and weakest, respectively. Photoluminescence and X-ray photoelectron results indicate the presence of oxygen vacancies in the ZnO thin film. This resistive switching behavior accompanied with ferromagnetism could be attributed to the intrinsic defects. The results clearly demonstrate that the ferromagnetic switching capability of Pt/ZnO/Pt device is critically dependent on the bias voltage administered, which potentially allows this device to have magneto-electrical device applications. Published by AIP Publishing.