期刊
APPLIED PHYSICS LETTERS
卷 109, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4967501
关键词
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资金
- King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program
- Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB)
- NSF MRSEC Program [DMR-1121053]
A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08V at 20 A/cm(2) was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror. Published by AIP Publishing.
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