期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 794, 期 -, 页码 518-524出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2019.04.215
关键词
Third-order optical nonlinearity; SiC film; Z-scan
资金
- National Natural Science Foundation of China [11404195, 11474187, 11504209, 11674199]
- China Postdoctoral Science Foundation [2015M582127]
- Natural Science Foundation of Shandong Province [ZR2016AM19, ZR2017BA004]
This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room temperature (RT) and annealed at 200 degrees C-800 degrees C. The third-order optical nonlinearity was investigated by Z-scan measurement at a wavelength of 1064 nm and a pulse duration of 25 ps. The self-defocusing behaviour was observed in a large nonlinear refractive index n(2) similar to 10(-14)m(2)/W, which was five orders of magnitude larger than the value of SiC crystals. By fitting the open-aperture data of the Z-scan, we determined the two- and three-photon absorption in the SiC films prepared at RT and in the annealed samples, respectively. The different nonlinear absorption behaviour was probably ascribed to the intermediate states between the conduction and valence bands. (C) 2019 Elsevier B.V. All rights reserved.
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