期刊
APPLIED PHYSICS LETTERS
卷 109, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4963266
关键词
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资金
- National Natural Science Foundation of China [61076081, 61274095]
- program for Ningbo Municipal Science and Technology Innovative Research Team [2016B10005]
In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 +/- 5 at 2V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated. Published by AIP Publishing.
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