期刊
APPLIED PHYSICS LETTERS
卷 108, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4944639
关键词
-
资金
- 973 chief project [2015CB655004]
- National Natural Science Foundation of China [61574061, 61574062]
- Science and Technology Project of Guangdong Province [2014B090915004, 2014B090916002, 2015A010101323, 2015B090915001, 2015B090914003]
- Educational Commission of Guangdong Province [2014KZDXM010, 2014GKXM012]
- Guangdong Innovative Research Team Program [201101C0105067115]
- Fundamental Research Funds for the Central Universities [2015ZP024, 2015ZZ063]
- State Key Laboratory of New Ceramic and Fine Processing Open Project [KF201508]
- Pear River S&T Nova Program of Guangzhou [201506010015, 201505051412482]
- Guangzhou Science and Technology Plan [201504281737045]
In this report, back-channel-etched (BCE) thin-film transistors (TFTs) were achieved by using Si-incorporated SnO2 (silicon tin oxide (STO)) film as active layer. It was found that the STO film was acid-resistant and in amorphous state. The BCE-TFT with STO active layer exhibited a mobility of 5.91 cm(2)/V s, a threshold voltage of 0.4 V, an on/off ratio of 10(7), and a steep subthreshold swing of 0.68 V/decade. Moreover, the device had a good stability under the positive/negative gate-bias stress. (C) 2016 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据