期刊
APPLIED PHYSICS LETTERS
卷 108, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4940401
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资金
- National Science Foundation under the MRSEC program [DMR-1120923]
- Engineering and Physical Sciences Research Council (EPSRC), U.K.
- National Science Foundation
The role of dislocations and defects in the material constituting the active region of an exciton-polariton laser has been examined and elucidated in the context of dynamic condensation and the temperature of the lower polariton condensate, T-LP. For a GaN microcavity diode polariton laser operated at room temperature and characterized in this study, the value of T-LP obtained from analysis of measured occupation in momentum space is 270 K, which is lower than the lattice temperature. Similar results from other room temperature GaN devices and GaAs-based polariton lasers operated at cryogenic temperatures are presented and discussed. (C) 2016 AIP Publishing LLC.
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