期刊
APPLIED PHYSICS LETTERS
卷 109, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4960484
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资金
- RCIQE, Hokkaido University, Sapporo, Japan
- InTechFun Project of EU Structural Funds in Poland [UDA-POIG.01.03.01.00-159/08-04]
- Visegrad Group (V4)-Japan Joint Research Program on Advanced Materials, SAFEMOST project [14/990/PNN16/0072]
We investigated the surface photovoltage (SPV) effect in n-GaN layers passivated with various insulators, i.e., Al2O3, SiO2, and SiN for ultraviolet (UV) light detection. We revealed that SPV in SiN/GaN shows markedly different behaviour than in oxide/GaN, i.e., the photo-signal exhibited very fast response (1 s) and recovery (2 s) times, contrary to oxide/GaN, and it was thermally stable up to 523 K. Furthermore, SPV spectra for SiN/GaN showed a sharp cut-off edge directly corresponding to the GaN band gap. We explained these results in terms of the different band structure of SiN/GaN and oxide/GaN junctions. All the observed properties of SPV response from SiN/GaN indicate that this relatively simple system can be applied to sensitive high temperature visible-blind UV detection. Published by AIP Publishing.
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