期刊
APPLIED PHYSICS LETTERS
卷 109, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4960529
关键词
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资金
- Australian Government through Australian Renewable Energy Agency (ARENA)
This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of similar to 10 m Omega cm(2) has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication. Published by AIP Publishing.
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