期刊
APPLIED PHYSICS LETTERS
卷 109, 期 10, 页码 100-104出版社
AMER INST PHYSICS
DOI: 10.1063/1.4962463
关键词
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资金
- Partnership Project for Fundamental Technology Researches of Ministry of Education, Culture, Sports, Science, and Technology, Japan
- Ministry of Education, Culture, Sports, Science, and Technology
- Japan Society for Promotion of Science (JSPS) KAKENHI [16K06268, 26630297]
- Guangxi Key Laboratory of Precision Navigation Technology and Application [DH201511]
- Grants-in-Aid for Scientific Research [26630297, 16K06268] Funding Source: KAKEN
Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 10(15) to 10(20) cm(-3) while the conductivity from 10(-4) to 1 S cm(-1) as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of beta-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices. Published by AIP Publishing.
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