期刊
APPLIED PHYSICS LETTERS
卷 108, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4940361
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资金
- EPSRC [EP K017829/1, EP/K00509X/1]
- Engineering and Physical Sciences Research Council [EP/K00509X/1, EP/K017829/1, 1531627, EP/K009877/1] Funding Source: researchfish
- EPSRC [EP/K00509X/1, EP/K017829/1, EP/K009877/1] Funding Source: UKRI
Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2-x), in a metal insulator metal crossbar structure. The high voltage margin of 3V, amongst the highest reported for monolayer selector devices, and the good current density of 10(4) A/cm(2) make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device's characteristics. (C) 2016 AIP Publishing LLC.
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