期刊
APPLIED PHYSICS LETTERS
卷 109, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4962132
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资金
- National Natural Science Foundation of China [11504303, 11504169, 61575094, 61136003]
- National Basic Research Program of China [2015CB932200]
- Fundamental Research Funds for the Central Universities [SWJTU2682016ZDPY10]
- Synergetic Innovation Center for Organic Electronics and Information Displays
- King Abdullah University of Science and Technology (KAUST)
Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.
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