期刊
APPLIED PHYSICS LETTERS
卷 108, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4944554
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资金
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2013R1A3A2042120, 2015001948, 2011-0030229]
- National Research Council of Science & Technology (NST), Republic of Korea [GP2016-0018] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2015R1A5A6001948, 2011-0030228, 2013R1A3A2042120] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report the impact of intrinsic defects in epitaxial BiFeO3 films on charge conduction and resistive switching of Pt/BiFeO3/SrRuO3 capacitors, although the BiFeO3 films show very similar ferroelectric domain types probed by piezoresponse force microscopy. Capacitors with p-type Bi-deficient and n-type Bi-rich BiFeO3 films exhibit switchable diode and conventional bipolar resistive switching behaviors, respectively. Both the capacitors show good retention properties with a high ON/OFF ratio of >100 in Bi-deficient films and that of >1000 in Bi-rich films. The present investigation advances considerably understanding of interface control through defect engineering of BiFeO3 thin films for non-volatile memory application. (C) 2016 AIP Publishing LLC.
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