4.7 Article

Edge dislocation interacting with a Steigmann-Ogden interface incorporating residual tension

期刊

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijengsci.2019.01.009

关键词

Dislocation; Steigmann-Ogden interface; Surface/interface tension; Surface/interface elasticity

资金

  1. Nanjing University of Aeronautics and Astronautics - Priority Academic Program Development of Jiangsu Higher Education Institutions
  2. Natural Sciences and Engineering Research Council of Canada [RGPIN -2017 - 03716115112]
  3. Changzhou SciTech Program [CJ20180034]
  4. Natural Science Foundation of Jiangsu Higher Education Institutions of China [18KJB413001]

向作者/读者索取更多资源

We study the interaction between a line edge dislocation and a bi-material interface located between two elastic half-planes subjected to plane strain deformations. Our interface model is based on the extension of the Gurtin-Murdoch model developed in a series of seminal papers by Steigmann and Ogden and incorporates the effects of interface stretching and bending resistance as well as residual interface tension. Mapping techniques are employed to derive semi-analytic solutions for the dislocation-induced stress field in both half-planes and the image force imposed on the dislocation. The influence of the interface parameters on the image force acting on the dislocation is illustrated in several numerical examples. We show that the effect of interface bending resistance on the mobility of the dislocation becomes quite remarkable as the dislocation approaches the interface. Specifically, we find that the introduction of interface bending resistance into the model of deformation allows for the possibility of a physically acceptable stable equilibrium position (reasonably close to the interface) for the dislocation when the minor half-plane (the half-plane free of the dislocation) is softer than the major half-plane (that incorporating the dislocation). We find also that in the presence of interface bending resistance, the effect of residual interface tension on the image force acting on the dislocation becomes negligible with decreasing dislocation-interface distance. (C) 2019 Elsevier Ltd. All rights reserved.

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