期刊
APPLIED PHYSICS LETTERS
卷 109, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4963128
关键词
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资金
- ARO [W911NF-16-1-0268]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1402886] Funding Source: National Science Foundation
Photocurrent excitation spectroscopy has been employed to probe the band structure and basic parameters of hexagonal boron nitride ( h-BN) epilayers synthesized by metal-organic chemical vapor deposition. Bias dependent photocurrent excitation spectra clearly resolved the band-to-band, free exciton, and impurity bound exciton transitions. The energy bandgap ( E-g), binding energy of free exciton ( E-x), and binding energy of impurity bound exciton ( E-bx) in h-BN have been directly obtained from the photocurrent spectral peak positions and comparison with the related photoluminescence emission peaks. The direct observation of the band-to-band transition suggests that h-BN is a semiconductor with a direct energy bandgap of E-g = 6.42 eV at room temperature. These results provide a more coherent picture regarding the fundamental parameters of this important emerging ultra-wide bandgap semiconductor. Published by AIP Publishing.
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