Material removal mechanisms in chemical-magnetorheological compound finishing

With a view to ultra-precision polishing of SiC wafers, the chemical-magnetorheological compound finishing (CMRF) method was proposed based on the principle of the Fenton reaction. To study material removal characteristics of CMRF, a force model for polishing pads based on magnetorheological (MR) effects was built. Through the theory of solid-phase particles, this study conducted a force analysis of carbonyl iron powders and abrasives and calculated polishing forces of a single polishing pad based on MR effects on a workpiece surface. Based on this, according to the Preston equation, a material removal model was established. By conducting the CMRF test on monocrystalline SiC wafers, it is found that the test results were consistent with theoretical calculations.