Subquantum conductive-bridge memory

Resistive memory devices suffer from a tradeoff between operating current and data retention. The key parameter governing this tradeoff is shown to be the 1-atom conductance of the filament material. High 1-atom conductances, comparable to the quantum G(0) = 2e(2)/h, are shown to make metal filaments unsuitable for low-power applications. Instead by using filaments containing Te, a semiconductor whose 1-atom conductance is deduced to be just 0.03G(0), it is shown that operating currents can be reduced by an order of magnitude compared to metals. Such subquantum conductive-bridge memory cells are broadly applicable to low-power applications. (C) 2016 AIP Publishing LLC.