期刊
APPLIED PHYSICS LETTERS
卷 108, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4941407
关键词
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资金
- Marie Curie FP7 Reintegration Grant
- DFG excellence program Nanosystems Initiative Munich
- collaborative research center [SFB 631]
- Technische Universitat Munchen, Institute for Advanced Study (TUM-IAS)
We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nano-wire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Garich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence line-widths in In-rich (x(Ga) < 0.4) and Ga-rich (x(Ga) > 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 < x(Ga) < 0.6) are mainly due to compositional inhomogeneities. Most remarkably, the catalyst-free InGaAs NWs exhibit a characteristic transition in crystal structure from wurtzite to zincblende (ZB) dominated phase near x(Ga) similar to 0.4 that is further reflected in a cross-over from blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase. (C) 2016 AIP Publishing LLC.
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