期刊
APPLIED PHYSICS LETTERS
卷 108, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4939230
关键词
-
资金
- NBRPC [2012CB921301, 2014CB920901]
- NSF [DMR-1207562, DMR-1508644]
- Welch Foundation Grant [C-1682]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1508644] Funding Source: National Science Foundation
We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3. (C) 2016 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据