期刊
APPLIED PHYSICS LETTERS
卷 109, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4967943
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资金
- NSF [DMR 1160756]
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences, and Engineering Division
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1160756] Funding Source: National Science Foundation
Uniaxial-stress experiments performed for the 3306 cm(-1) vibrational line assigned to the interstitial-hydrogen, shallow-donor center in In2O3 reveal its symmetry and transition-moment direction. The defect alignment that can be produced by a [001] stress applied at 165K is due to a process that is also a hydrogen-diffusion jump, providing a microscopic determination of the diffusion constant for H in In2O3 and its mechanism. Our experimental results strongly complement the theoretical predictions for the structure and diffusion of the interstitial hydrogen donor center in In2O3. Published by AIP Publishing.
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