期刊
APPLIED PHYSICS LETTERS
卷 109, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4959831
关键词
-
资金
- ONR PECASE Program
- MRSEC program of the National Science Foundation [DMR-1419807]
Ohmic contacts fabricated by regrowth of n(+) GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据