期刊
IETE TECHNICAL REVIEW
卷 37, 期 4, 页码 377-390出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/02564602.2019.1629341
关键词
RRAM; Conducting filament; Materials; Variations; Scalability; Resistive switching
With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device. Therefore, non-charge based memory technologies such as Resistive Random Access Memory (RRAM) become promising for future applications. RRAM is not only more scalable, but is typically faster and consumes less power than the existing memory technologies. However, RRAM suffers from higher impact of variations and reliability issues. In this review paper, we explain the basic aspects of RRAMs, highlight their advantages and elucidate challenges involved in replacing the existing memory technologies with RRAMs.
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