相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers
Prashanth Paramahans Manik et al.
APPLIED PHYSICS EXPRESS (2015)
Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts
Ashish Agrawal et al.
APPLIED PHYSICS LETTERS (2014)
The Thermodynamic Properties of the f- Elements and their Compounds. Part 2. The Lanthanide and Actinide Oxides
Rudy J. M. Konings et al.
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA (2014)
Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
Shashank Gupta et al.
JOURNAL OF APPLIED PHYSICS (2013)
Ohmic contact on n-type Ge using Yb-germanide
Zhi-Wei Zheng et al.
APPLIED PHYSICS LETTERS (2012)
Nanocrystal-based Ohmic contacts on n and p-type germanium
V. Pavan Kishore et al.
APPLIED PHYSICS LETTERS (2012)
Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
Prashanth Paramahans Manik et al.
APPLIED PHYSICS LETTERS (2012)
Fermi Level Depinning Failure for Al/GeO2/Ge Contacts
Hao Yu et al.
ECS SOLID STATE LETTERS (2012)
Impact of fixed charge on metal-insulator-semiconductor barrier height reduction
Jenny Hu et al.
APPLIED PHYSICS LETTERS (2011)
Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
J-Y. Jason Lin et al.
APPLIED PHYSICS LETTERS (2011)
Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
Yi Zhou et al.
APPLIED PHYSICS LETTERS (2010)
Fermi-level pinning and charge neutrality level in germanium
A. Dimoulas et al.
APPLIED PHYSICS LETTERS (2006)
Recent advances in Schottky barrier concepts
RT Tung
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)