期刊
APPLIED PHYSICS LETTERS
卷 109, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4960583
关键词
-
资金
- National Science Foundation [DMR-1508560]
Growth spirals exhibit appealing properties due to a preferred layer stacking and lack of inversion symmetry. Here, we report spiral growth of MoS2 during chemical vapor deposition on SiO2/Si and epitaxial graphene/SiC substrates, and their physical and electronic properties. We determine the layer-dependence of the MoS2 bandgap, ranging from 2.4 eV for the monolayer to a constant of 1.3 eV beyond the fifth layer. We further observe that spirals predominantly initiate at the step edges of the SiC substrate, based on which we propose a growth mechanism driven by screw dislocation created by the coalescence of two growth fronts at steps. Published by AIP Publishing.
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