☆
4.6
Article
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
APPLIED PHYSICS LETTERS (2016)
评价这篇论文
主要评分表示论文的整体质量水平。次要评分独立反映论文的优点或缺点。
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started