期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 66, 期 7, 页码 1688-1693出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2019.2914494
关键词
Radiation damage; SiC Schottky barrier diode (SBD); single-event burnout; thermal runaway
The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified by a device simulator with parameters carefully extrapolated to an extended temperature range far exceeding the melting point of SiC. It is shown that the critical electric field needed to activate the impact ionization attributable to SiC material and the Schottky barrier contact on it are responsible for the thermal runaway in SiC SBDs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据