期刊
APPLIED PHYSICS EXPRESS
卷 9, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.052103
关键词
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资金
- National Basic Research Program (973 program) of China [2012CB619302]
- Guangdong Natural Science Foundation [2015A030312011]
Solar-blind avalanche photodiodes were fabricated with an all AlGaN-based epitaxial structure on sapphire by metal-organic chemical vapor deposition. The devices demonstrate a maximum responsivity of 114.1 mA/W at 278 nm and zero bias, corresponding to an external quantum efficiency (EQE) of 52.7%. The EQE improves to 64.8% under a bias of -10V. Avalanche gain higher than 2 x 10(4) was obtained at a bias of -140V. The high performance is attributed to the all AlGaN-based p-i-n structure comprised of undoped and Si-doped n-type Al0.4Ga0.6N on a high quality AlN layer and highly conductive p-type AlGaN grown with In-surfactant-assisted Mg-delta doping. (C) 2016 The Japan Society of Applied Physics
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