Hall scattering factors in p-type 4H-SiC with various doping concentrations

The Hall scattering factor (gamma H) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 x 10(14) -7.1 x 10(18)cm(-3) was investigated from 300 to 900 K.gamma H was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance-voltage measurements. gamma H decreased with increasing temperature or doping concentration; gamma H = 1-0.4 for the doping concentration of 5.8 x 10(14)cm(-3) and gamma H = 0.5-0.2 for the doping concentration of 7.1 x 10(18)cm(-3). The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC. (C) 2016 The Japan Society of Applied Physics