4.5 Article

Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss

期刊

APPLIED PHYSICS EXPRESS
卷 9, 期 2, 页码 -

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IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.024101

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资金

  1. Ministry of Education, Culture, Sports, Science and Technology, Japan
  2. Industry-Academia Collaborative R&D Program from the Japan Science and Technology Agency, Japan
  3. Strategic Information and Communications R&D Promotion Programme (SCOPE) from the Ministry of Internal Affairs and Communications
  4. Grants-in-Aid for Scientific Research [26249045, 16H06292] Funding Source: KAKEN

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A large increase in oscillation frequency was achieved in resonant-tunneling-diode (RTD) terahertz oscillators by reducing the conduction loss. An n(+)-InGaAs layer under the air-bridge electrode connected to the RTD was observed to cause a large conduction loss for high-frequency current due to the skin effect. By introducing a new fabrication process removing the InGaAs layer, we obtained 1.92-THz oscillation, which extended the highest frequency of room-temperature electronic single oscillators. Theoretical calculations reasonably agreed with the experiment, and an oscillation above 2 THz is further expected with an improved structure of the slot antenna used as a resonator and radiator. (C) 2016 The Japan Society of Applied Physics

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