期刊
APPLIED PHYSICS EXPRESS
卷 9, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.022102
关键词
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资金
- King Abdulaziz City for Science and Technology (KACST)
- King Abdullah University of Science and Technology (KAUST)
- University of California, Santa Barbara
- Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB)
- NSF NNIN network [ECS-03357650]
- NSF MRSEC program [DMR-1121053]
- UCSB Materials Research Laboratory (MRL)
In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 x 10(-4)Omega cm(2), including contact resistance. As a demonstration, a blue-light-emitting diode on a (20 (2) over bar(1) over bar) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED. (C) 2016 The Japan Society of Applied Physics
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