期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 6, 页码 2563-2568出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2912618
关键词
III-V; Fermi-level pinning; FinFETs
资金
- Defense Threat Reduction Agency (DTRA) [HDTRA1-14-1-0057]
- Lam Research
- National Science Foundation (NSF) (E3S STC) [0939514]
- Korea Institute of Science and Technology
We study the impact of fin-width scaling on transport in highly doped InGaAs fins and the effect of digital etch (DE). Our experiments suggest the existence of a 10-nm-wide deadzone on each side of the fin that does not contribute to the transport. The extent of the deadzone cannot be mitigated by DE nor sidewall passivation. Simulations suggest that the Fermi-level pinning and its associated subsurface depletion region alone cannot explain the relatively wide deadzone that is measured. We propose an explanation based on the combination of Fermi-level pinning and mobility degradation as the fin width scales down. This leads to an apparent wider deadzone than accounted by the Fermi-level pinning alone.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据