A Study of Solution-Processed Zinc-Tin-Oxide Semiconductors for Thin-Film Transistors

Thin-film transistors (TFTs) fabricated using solution-processed zinc-tin-oxide (ZTO) semiconductor thin films as the channel layers are proposed in this paper. Effect of the ZTO annealing temperature on the TFT performance is studied. Significant reduction of oxygen-vacancy and chlorine residue contents in the ZTO semiconductor can be obtained when the annealing temperatures are 500 degrees C-700 degrees C. The ZTO semiconductor with the annealing process at 600 degrees C in air can give an optimal ZTO TFT having a low leakage current of 10(-12) A and a high I-ON/I-OFF ratio of 3 x 10(7). The subthreshold swing is 0.39 V/decade corresponding to an interface trap density of 1.2 x 10(12) cm(-2)eV(-1).