期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 7, 页码 3110-3117出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2915106
关键词
Aloe barbadensis miller (A. vera) gel; nonvolatile memories; polysaccharides; resistive switching; synapses
资金
- Universiti Sains Malaysia through Bridging Fund [304]
The switching behaviors of polysaccharides based resistive random access memories change substantially depending on the electrical inputs. Here, the switching dynamics of the device are presented by varying the applied current compliance (!cc) and voltage sweeping rate (v). The results show that the device resistance in the low resistance state (R_Rs) can be modulated over five orders of magnitude by varying kc and v in the typical current voltage measurements. The Ri_Rs modulation is attributed to the variable tunneling gap between the filament tip and the top electrode (TE). Conductance quantization is observed once a single-atomic contact with resistance <12.9 kit is formed. Depending on the TEs, both integer and half-integer multiples of quantization levels are being observed, demonstrating its potential for multilevel data storage. In addition, the results unveil the stochastic strengthening and rupturing of the filament as modulated by periodic voltage pulses, thus enabling the device to operate in both volatile and nonvolatile modes. The device offers excellent switching dynamics for preliminary emulation of synapselike learning and forgetting behaviors in neural junctions for next generation neuromorphic computing systems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据