期刊
APPLIED PHYSICS EXPRESS
卷 9, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.041501
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资金
- National Natural Science Foundation of China [61474094, 61176092]
- National Basic Research Program of China [2012CB933503, 2013CB632103]
- Fundamental Research Funds for the Central Universities [20720150028]
- Hankuk University Research Fund
A bipolar one-diode-one-resistor (1D1R) device with a Pt/HfO2/Ti/n-Si(001) structure was demonstrated. The 1D1R resistive random access memory (RRAM) device consists of a Ti/n-Si(001) diode and a Pt/HfO2/Ti resistive switching cell. By using the Ti layer as the shared electrode for both the diode and the resistive switching cell, the 1D1R device exhibits the property of stable self-compliance and the characteristic of robust resistive switching with high uniformity. The high/low resistance ratio reaches 10(3). The electrical RESET/SET curve does not deteriorate after 68 loops. Low-temperature studies show that the 1D1R RRAM device has a critical working temperature of 250 K, and at temperatures below 250 K, the device fails to switch its resistances. (C) 2016 The Japan Society of Applied Physics
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