Design and Performance Analysis of Dielectrically Modulated Doping-Less Tunnel FET-Based Label Free Biosensor

In this paper, we have proposed a charge plasma-based doping less double gated tunnel FET (DLDGTFET)-based biosensor using dielectric modulation with a cavity introduced at the source side for the label free sensing of the biomolecules. These biomolecules are immobilized in the cavity region to induce drain current. The sensing of the biomolecules is based on the drain current of the device while the drain current is based on the dielectric constant and the interfacing charges of the biomolecules. The cavity length is varied between 25 and 30 nm and different dielectric constants have been used. The expansion of the cavity length results in slight reduction of the drain current due to lowering of the capacitance. Higher dielectric constants result in better drain current values which leads to an increase in the sensitivity of the device. The maximum sensitivity attained was as high as 1.0 x 10(10). As compared to other transistors, DLDGTFET provides better sensitivity as a biosensor and also the leakage current is low.