4.5 Article

Fast and high light yield scintillation in the Ga2O3 semiconductor material

期刊

APPLIED PHYSICS EXPRESS
卷 9, 期 4, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.042601

关键词

-

资金

  1. Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)
  2. Adaptable and Seamless Technology transfer Program (A-STEP) by the Japan Science and Technology Agency (JST)
  3. Murata Science Foundation
  4. Research Institute of Electronics, Shizuoka University
  5. [26249147]
  6. Grants-in-Aid for Scientific Research [26249147] Funding Source: KAKEN

向作者/读者索取更多资源

We report the distinct scintillation properties of the well-known Ga2O3 semiconductor material. Under UV excitation, the photoluminescence (PL) emission peak appeared near a wavelength of 380nm with a quantum yield of 6%, and fast decays of 8 and 793 ns were observed. In contrast, the X-ray-induced scintillation spectrum showed an intense emission band near a wavelength of 380 nm, whose decay curve was reproduced using two exponential decay components with time constants of 8 and 977 ns. The pulse height spectrum of Cs-137 gamma-rays measured using Ga2O3 showed a clear photoabsorption peak with a light yield of 15000 +/- 1500 photons/MeV. (C) 2016 The Japan Society of Applied Physics

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据