Optical Float-Zone Grown Bulk β-Ga2O3-Based Linear MSM Array of UV-C Photodetectors

In this letter, we demonstrate 1 x 8 linear metal-semiconductor-metal arrays of UV-C photodetectors based on optical-float-zone grown bulk (100)-oriented beta-Ga2O3. The as-grown polished bulk samples exhibited an RMS roughness of 1.4 nm and the full-width at half-maxima of 0.19 degrees. The average peak responsivity (257 nm), dark current, photo-to-dark current ratio, and UV-to-visible rejection ratio of the devices in the array were measured to be 4 AW(-1), 0.23 nA, similar to 10(2), and similar to 10(3), respectively, at a bias of 40 V. The uniformity as well as the variability of the detector parameters across the devices in the array was investigated before and after wire bonding.