期刊
APPLIED PHYSICS EXPRESS
卷 9, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.021301
关键词
-
资金
- National Natural Science Foundation of China [61176092, 61474094]
- National Basic Research Program of China [2013CB63210, 2012CB933503]
Tin (Sn) was introduced into Ge for the preparation of a thin GeSnOx by thermal oxidation, which could strongly modulate the Schottky barrier height of metal/n-Ge contacts. A small amount of Sn doping in Ge could effectively suppress the formation of GeOx during oxidation, alleviating the Fermi-level pinning effect in Ge. This resulted in the strong correlation between the Schottky barrier heights of metal/GeSnOx/n-Ge contacts and metal work functions. The ohmic Al/n-Ge contacts and the extremely low leakage current density of the HfO2/Ge structure achieved by the simple thermal oxidation of a Sn-doped Ge surface suggested the potential of this method in the fabrication of Ge-based devices. (C) 2016 The Japan Society of Applied Physics
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