期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 7, 页码 1048-1051出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2917285
关键词
Gallium compounds; amplifiers; FET amplifiers; microwave amplifiers; microwave power FET amplifiers; microwave FET amplifiers; semiconductor superlattices
资金
- Defense Advanced Research Projects Agency (DARPA)-Microsystems Technology Office (MTO) Dynamic Range-enhanced Electronics and Materials (DREaM) Program [FA8650-18-C-7805]
We report on the super-lattice castellated field-effect transistor (SLCFET) device architecture whose unique geometry enables new scaling and optimization strategies for RF power and performance. Measured transistor values show excellent potential for both power and low-noise amplification applications. With I-DS > 1.8 A/mm, f(T) = 47GHz, and f(max) = 124GHz, we are able to demonstrate P-out > 6 W/mm, PAE > 45%, and OIP3/PDC = 6 dB at 30 GHz.
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