期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 7, 页码 1155-1158出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2917556
关键词
Superjunction MOSFET; dual-Schottky; body diode; built-in diode; reverse recovery
资金
- Hong Kong Research Grants Council (RGC) Research Impact Fund [R6008-18]
A new superjunction MOSFET (SJ-MOSFET) architecture with dual built-in Schottky diodes is proposed and studied with the numerical TCAD simulations. This letter is based on silicon. One Schottky contact is formed at the top of the n-pillar, while the other is formed at the bottom of the p-pillar. During the reverse conduction period, the Schottky junctions turn on at a lower voltage than the PN junction. The current flows through n-pillar and p-pillar in parallel, so the potential difference across the PN junction is kept below its turn-on voltage. Thus, minority carrier injection through the PN junction is completely suppressed, leading to a superior reverse recovery performance. Integration of a single Schottky contact to either the n-pillar or the p-pillar cannot completely suppress the turn-on of the PN junction in the SJ-MOSFET due to the potential drop created by the current through only one type of the pillars. Furthermore, the proposed dual-Schottky SJ-MOSFET reduces the gate charge (QG) and the gate-to-drain charge (QGD), compared with the conventional SJ-MOSFET, leading to better figures of merit.
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