期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 7, 页码 1143-1146出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2916628
关键词
Nanowalls; optoelectronics; ZnCr2O4; photo-detection
资金
- Department of Science and Technology (DST) [SR/NM/NAT/02-2005]
- Department of Science and Technology, India
We demonstrate high performance broadband UV-to-NIR detection, which is a critical issue associated with ZnO-based photodetectors. The as-synthesized ZnO-ZnCr2O4 nanowalls were first time utilized for broadband, i.e., 250-850 nm photo-detection (both in front and back illumination configurations). The dark current was found to be as low as 0.12 nA. The device has shown peak sensitivity for the UV region (lambda(ex) = 350 nm) with the photo-sensitivity of similar to 1.28x10(5), photo-responsivity of 5.49 AW(-1), photo-detectivity of 1.91x 10(13) cmHz(1/2)W(-1), linear dynamic range of 82 dB, and external quantum efficiency of 1900%. In addition, the white light emission (CIE coordinates of 0.32 and 0.34) was also observed in the ZnO-ZnCr2O4 nanowalls. This letter will open new directions in oxide semiconductors-based optoelectronic devices.
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