期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 6, 页码 909-912出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2912032
关键词
Tin oxide; SnO2; transistor; UV irradiation
资金
- Ministry of Science and Technology of Taiwan
Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm(2)/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/OFF-current values of 3 x 10(6) and 7 x 10(5) was achieved for the SnO2 TFT at low processing temperatures of 180 degrees C and 100 degrees C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.
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