期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 122, 期 10, 页码 -出版社
SPRINGER
DOI: 10.1007/s00339-016-0450-8
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In this study, an analysis of temperature-dependent electrical characteristics of ZnPc/p-Si structure has been presented. Conduction mechanisms that are accounted for the organic/inorganic devices are evaluated. At low forward voltage, current-voltage (I-V) characteristics show ohmic behavior, limiting extraction of holes from p-Si over the ZnPc/p-Si heterojunction. Thermally activated conduction mechanism appears to be space-charge-limited conduction mechanism, taking into account the presence of an exponential trap distribution with total concentration of traps, N-t of 5.77 x 10(25) m(-3). The series resistance is found to be temperature dependent. There is a critical point on the regime of series resistance at 200 K. The capacitance varies with temperature at different rates below and above room temperature, indicating a variation in the dielectric constant.
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