Temperature effect on memristive ion channels

Neuron shows distinct dependence of electrical activities on membrane patch temperature, and the mode transition of electrical activity is induced by the patch temperature through modulating the opening and closing rates of ion channels. In this paper, inspired by the physical effect of memristor, the potassium and sodium ion channels embedded in the membrane patch are updated by using memristor-based voltage gate variables, and an external stimulus is applied to detect the variety of mode selection in electrical activities under different patch temperatures. It is found that each ion channel can be regarded as a physical memristor, and the shape of pinched hysteresis loop of memristor is dependent on both input voltage and patch temperature. The pinched hysteresis loops of two ion-channel memristors are dramatically enlarged by increasing patch temperature, and the hysteresis lobe areas are monotonously reduced with the increasing of excitation frequency if the frequency of external stimulus exceeds certain threshold. However, for the memristive potassium channel, the AREA1 corresponding to the threshold frequency is increased with the increasing of patch temperature. The amplitude of conductance for two ion-channel memristors depends on the variation of patch temperature. The results of this paper might provide insights to modulate the neural activities in appropriate temperature condition completely, and involvement of external stimulus enhance the effect of patch temperature.