Improved piezoelectric properties of Pb(Zr0.70Ti0.30)O3 ceramics doped with non-polar bismuth manganite

This report documents the electrical features of (1-x) pb(Zr0.70Ti0.30)O-3-x BiMn2O5 ceramics with x = 0-0.05 (PZT-BM). A structural disorder was introduced by doping with non-polar bismuth manganite (BM) to increase the chemical disorder in PZT ceramics, which is one of the reasons for its marked piezoelectric properties. The chemical disorder was confirmed using scanning electron microscopy. The rhombohedral symmetry of a crystal lattice was determined using the XRD powder test. To assess the influence of BM dopant on the electric properties of PZT, dielectric spectroscopy was performed at a frequency f = 1 kHz-1 MHz and in a temperature range of 290-680 K. Several effects on the dielectric characteristics were induced by the addition of BM, including the shift and diffuseness of the transition from the ferroelectric to the paraelectric phase and the diffuseness of the transition between two ferroelectric phases. The electrical conductivity increased as the BM content increased. Piezoelectric studies have shown that 0.99 PZT-0.01 BM ceramics exhibit better piezoelectric properties and higher permittivity than pure PZT ceramics. The 0.99 PZT-0.01 BM piezoelectric coefficient d(33) increased by approximately 30% compared with pure PZT.