4.7 Article

A first principle study on systematic stability and electronic properties of GaN nanowire surface with Cs/Li/NF3 co-adsorption

期刊

APPLIED SURFACE SCIENCE
卷 478, 期 -, 页码 393-397

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2019.01.279

关键词

GaN nanowire; Stability; Surface adsorption; Electronic properties; Cs/Li/NF3; First principles

资金

  1. Qing Lan Project of Jiangsu Province, China [2017-AD41779]
  2. Fundamental Research Funds for the Central Universities, China [30916011206]
  3. Six Talent Peaks Project in Jiangsu Province, China [2015-XCL008]

向作者/读者索取更多资源

In this study, the systematic stability and surface electronic properties of (100) surface GaN nanowire are investigated through first principle calculations based on density functional theory. Results suggest that Li atoms insertion on the nanowire surface can promote the NF3 adsorption. Equiproportional Li and Cs adatoms are most beneficial for the reduction of surface work function and negative electron affinity (NEA) state. The variation of work function is closely associated with the change of positive/negative charge centers and distances between charge centers, further affecting surface dipole moment. This study is expected to direct the surface activation process of Cs/Li/NF3 for NEA GaN nanowire with higher stability and longer lifetime.

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