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Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases
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Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes
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Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
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Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics
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Next generation of Ge1-ySny (y=0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
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