High-temperature (350°C) oxidized iridium Schottky contacts on -Ga2O3

Oxidized iridium (IrOx) Schottky contacts (SCs) with excellent high temperature stability were fabricated on ((2) over bar 01) beta-Ga2O3 single crystal substrates. These IrOx:-Ga2O3 SCs were operated at temperatures from 24 to 350 degrees C with only a very small increase in reverse leakage current, while maintaining extremely high rectification ratios (at +/- 3V) of more than 10 orders of magnitude at all temperatures, including 350 degrees C. This remarkable high temperature performance was due to their very high and thermally stable rectifying barriers that, after an initial heat-related improvement, were characterized by zero-bias effective barrier heights of 2.05 +/- 0.02eV and ideality factors of 1.05-1.10, which were almost unchanged by further repeated operation at 350 degrees C. The reverse leakage current density at 350 degrees C was only approximate to 2.3x10(-9) Acm(-2) (approximate to 3.0pA) at -3V and approximate to 7.5x10(-8) Acm(-2) (approximate to 100pA) at -100V. These IrOx:-Ga2O3 SCs represent a significant improvement in high-temperature -Ga2O3 SC performance, with considerable potential for the fabrication of high temperature -Ga2O3 rectifying diodes, deep UV photodetectors, and metal-semiconductor field effect transistors.