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J. H. Leach et al.
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MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
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LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates
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Donors and deep acceptors in beta-Ga2O3
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Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties
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Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
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ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
Michele Baldini et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Fundamental limits on the electron mobility of β-Ga2O3
Youngho Kang et al.
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Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
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Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
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Intrinsic electron mobility limits in β-Ga2O3
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Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
Subrina Rafique et al.
APPLIED PHYSICS LETTERS (2016)
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
Subrina Rafique et al.
APPLIED PHYSICS LETTERS (2016)
Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
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IEEE ELECTRON DEVICE LETTERS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
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Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals
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Anisotropic thermal conductivity in single crystal β-gallium oxide
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APPLIED PHYSICS LETTERS (2015)
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy
Yuichi Oshima et al.
JOURNAL OF CRYSTAL GROWTH (2015)
Brillouin zone and band structure of β-Ga2O3
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PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy
Kazushiro Nomura et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
Kohei Sasaki et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Homoepitaxial growth of beta-Ga2O3 layers by metal-organic vapor phase epitaxy
Guenter Wagner et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS (2012)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Czochralski growth and characterization of β-Ga2O3 single crystals
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CRYSTAL RESEARCH AND TECHNOLOGY (2010)
Vertical solar-blind deep-ultraviolet schottky photodetectors based on beta-Ga2O3 substrates
Takayoshi Oshima et al.
APPLIED PHYSICS EXPRESS (2008)
Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
Hideo Aida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy
Takayoshi Oshima et al.
THIN SOLID FILMS (2008)
Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing
Shigeo Ohira et al.
THIN SOLID FILMS (2008)
Electronic and thermodynamic properties of β-Ga2O3
Haiying He et al.
APPLIED PHYSICS LETTERS (2006)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Czochralski grown Ga2O3 crystals
Y Tomm et al.
JOURNAL OF CRYSTAL GROWTH (2000)
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