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Origin of the Magnetoelectric Coupling Effect in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 Multiferroic Heterostructures
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PHYSICAL REVIEW LETTERS (2010)
Interface-Induced Polarization and Inhibition of Ferroelectricity in Epitaxial SrTiO3/Si
A. M. Kolpak et al.
PHYSICAL REVIEW LETTERS (2010)
Is There an Intrinsic Limit to the Charge-Carrier-Induced Increase of the Curie Temperature of EuO?
T. Mairoser et al.
PHYSICAL REVIEW LETTERS (2010)
Creation of a two-dimensional electron gas at an oxide interface on silicon
J. W. Park et al.
NATURE COMMUNICATIONS (2010)
Nanometer-Thick Single-Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology
Wen Hsin Chang et al.
ADVANCED MATERIALS (2009)
All-Oxide Crystalline Microelectromechanical Systems: Bending the Functionalities of Transition-Metal Oxide Thin Films
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ADVANCED MATERIALS (2009)
Mixed-valence manganites
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ADVANCES IN PHYSICS (2009)
Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy
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APPLIED PHYSICS LETTERS (2009)
Stable structure and effects of the substrate Ti pre-treatment on the epitaxial growth of SrTiO3 on GaAs
Jianli Wang et al.
EPL (2009)
Electrical properties and interfacial structure of epitaxial LaAlO3 on Si (001)
J. W. Reiner et al.
JOURNAL OF APPLIED PHYSICS (2009)
Integration of (208) oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer
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JOURNAL OF APPLIED PHYSICS (2009)
Improved crystalline properties of laser molecular beam epitaxy grown SrTiO3 by rutile TiO2 layer on hexagonal GaN
W. B. Luo et al.
JOURNAL OF APPLIED PHYSICS (2009)
Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces
M. D. Losego et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Electrical creation of spin polarization in silicon at room temperature
Saroj P. Dash et al.
NATURE (2009)
A Ferroelectric Oxide Made Directly on Silicon
Maitri P. Warusawithana et al.
SCIENCE (2009)
Taming the Mott transition for a novel Mott transistor
Isao H. Inoue et al.
ADVANCED FUNCTIONAL MATERIALS (2008)
Adsorption-controlled growth of EuO by molecular-beam epitaxy
R. W. Ulbricht et al.
APPLIED PHYSICS LETTERS (2008)
Synthesis, structure, and magnetic studies on self-assembled BiFeO3-CoFe2O4 nanocomposite thin films
R. Muralidharan et al.
JOURNAL OF APPLIED PHYSICS (2008)
Fringe-induced barrier lowering (FIBL) included sub-threshold swing model for double-gate MOSFETs
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JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Recent advances in pulsed-laser deposition of complex oxides
H. M. Christen et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2008)
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
Sayeef Salahuddin et al.
NANO LETTERS (2008)
Nanoscale control of an interfacial metal-insulator transition at room temperature
C. Cen et al.
NATURE MATERIALS (2008)
Growth and structural properties of crystalline LaAlO3 on Si(001)
J. W. Reiner et al.
MICROELECTRONIC ENGINEERING (2008)
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN
Andreas Schmehl et al.
NATURE MATERIALS (2007)
Structural basis for the conducting interface between LaAlO3 and SrTiO3
P. R. Willmott et al.
PHYSICAL REVIEW LETTERS (2007)
The diamond age of spintronics - Quantum electronic devices that harness the spins of electrons might one day enable room-temperature quantum computers - made of diamond
David D. Awschalom et al.
SCIENTIFIC AMERICAN (2007)
Using half-metallic manganite interfaces to reveal insights into spintronics
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JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact
Berend T. Jonker et al.
NATURE PHYSICS (2007)
Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures
S. Y. Yang et al.
APPLIED PHYSICS LETTERS (2007)
Oxide spintronics
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IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Epitaxial integration of (0001) BiFeO3 with (0001) GaN
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APPLIED PHYSICS LETTERS (2007)
A review and recent developments in photocatalytic water-splitting using TiO2 for hydrogen production
Meng Ni et al.
RENEWABLE & SUSTAINABLE ENERGY REVIEWS (2007)
Self-assembled growth of BiFeO3-CoFe2O4 nanostructures
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ADVANCED MATERIALS (2006)
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
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MICROELECTRONIC ENGINEERING (2006)
Field-effect transistors with SrHfO3 as gate oxide
C. Rossel et al.
APPLIED PHYSICS LETTERS (2006)
c-axis oriented epitaxial BaTiO3 films on (001) Si
V. Vaithyanathan et al.
JOURNAL OF APPLIED PHYSICS (2006)
Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition
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APPLIED SURFACE SCIENCE (2006)
Critical features of colossal magnetoresistive manganites
Y Tokura
REPORTS ON PROGRESS IN PHYSICS (2006)
Why some interfaces cannot be sharp
N Nakagawa et al.
NATURE MATERIALS (2006)
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson
REPORTS ON PROGRESS IN PHYSICS (2006)
Recent progress in relaxor ferroelectrics with perovskite structure
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JOURNAL OF MATERIALS SCIENCE (2006)
Epitaxial growth of multiferroic YMnO3 on GaN -: art. no. 171915
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APPLIED PHYSICS LETTERS (2005)
Electric field-induced magnetization switching in epitaxial columnar nanostructures
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NANO LETTERS (2005)
Diamond semiconductor technology for RF device applications
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SOLID-STATE ELECTRONICS (2005)
Magnetic-field-induced electric polarization in multiferroic nanostructures
CW Nan et al.
PHYSICAL REVIEW LETTERS (2005)
Phase control through anisotropic strain in Nd0.5Sr0.5MnO3 thin films -: art. no. 182504
M Nakamura et al.
APPLIED PHYSICS LETTERS (2005)
Direct observation of a coupling between spin, lattice and electric dipole moment in multiferroic YMnO3 -: art. no. 180413
S Lee et al.
PHYSICAL REVIEW B (2005)
Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN
PJ Hansen et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)
Polar heterostructure for multifunction devices: Theoretical studies
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IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)
Tunability of the dielectric response of epitaxially strained SrTiO3 from first principles
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PHYSICAL REVIEW B (2005)
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
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NATURE (2004)
Ferroelectric stability of BaTiO3 in a crystalline oxide on semiconductor structure
JW Reiner et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2004)
Band offsets at heterojunctions between SrTiO3 and BaTiO3 and Si(100)
F Amy et al.
JOURNAL OF APPLIED PHYSICS (2004)
Enhancement of ferroelectricity in strained BaTiO3 thin films
KJ Choi et al.
SCIENCE (2004)
Growth and characterization of (Ba0.5Sr0.5)TiO3 films epitaxially grown on (002) GaN/(0006) Al2O3 electrode
CR Cho et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2004)
Elastic anomaly for SrTiO3 thin films grown on Si(001) -: art. no. 201403
FS Aguirre-Tostado et al.
PHYSICAL REVIEW B (2004)
Electronic properties of ferroelectric BaTiO3/MgO capacitors on GaAs
TE Murphy et al.
APPLIED PHYSICS LETTERS (2004)
Atomic and electronic structure of the Si/SrTiO3 interface -: art. no. 125323
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PHYSICAL REVIEW B (2003)
Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications
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IEEE ELECTRON DEVICE LETTERS (2003)
The interface of epitaxial SrTiO3 on silicon:: in situ and ex situ studies
XM Hu et al.
APPLIED PHYSICS LETTERS (2003)
Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon
J Lettieri et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS (2002)
Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
MD Groner et al.
THIN SOLID FILMS (2002)
GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer
K Eisenbeiser et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Colossal-magnetoresistive manganite thin films
W Prellier et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2001)
AlGaN/AlN/GaN high-power microwave HEMT
L Shen et al.
IEEE ELECTRON DEVICE LETTERS (2001)
Physical structure and inversion charge at a semiconductor interface with a crystalline oxide
RA McKee et al.
SCIENCE (2001)
The physics of manganites: Structure and transport
MB Salamon et al.
REVIEWS OF MODERN PHYSICS (2001)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
Band offset and structure of SrTiO3/Si(001) heterojunctions
SA Chambers et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS (2001)
Top-interface-controlled fatigue of epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric thin films on La0.7Sr0.3MnO3 electrodes
WB Wu et al.
APPLIED PHYSICS LETTERS (2000)
Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions
SA Chambers et al.
APPLIED PHYSICS LETTERS (2000)
Origin of preferential orthorhombic twinning in SrRuO3 epitaxial thin firms
JP Maria et al.
APPLIED PHYSICS LETTERS (2000)
Field effect transistors with SrTiO3 gate dielectric on Si
K Eisenbeiser et al.
APPLIED PHYSICS LETTERS (2000)